Transcend TS1GSK72W6H-I memory module 8 GB 1 x 8 GB DDR3L 800 MHz ECC

Transcend TS1GSK72W6H-I. Component for: Notebook, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3L, Memory clock speed: 800 MHz, Memory form factor: 204-pin SO-DIMM, ECC

Manufacturer: Transcend

Availability: Out of Stock - on backorder and will be dispatched once in stock.

SKU: 6293485

Manufacturer part number: TS1GSK72W6H-I

Price: $103.69

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With industrial range (-40° to 85°C) operating temperature flexibility, Transcend's Industrial Grade Temp DDR3 Low Voltage ECC SO-DIMM modules are specially engineered to maintain optimum performance even in extreme hot or cold environments. These modules offer unparalleled stability and synchronized performance for today's latest high-powered server-class computing systems. Operating at a nominal voltage of just 1.35V presents several advantages, such as a lower electrical load on the memory controller and reduced power consumption. To increase overall system reliability, Transcend's Industrial Temp DDR3 Low Voltage ECC SO-DIMM also features Error Correcting Code (ECC) which monitors data being transferred in and out of memory and corrects any errors found.

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional differential data-strobe
Internal calibration through ZQ pin
On-die termination with ODT pin
Serial presence detect with EEPROM
On DIMM Thermal Sensor support
Support ECC error detection and correction
Asynchronous reset
100% tested for stability, compatibility and performance

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional differential data-strobe
Internal calibration through ZQ pin
On-die termination with ODT pin
Serial presence detect with EEPROM
On DIMM Thermal Sensor support
Support ECC error detection and correction
Asynchronous reset
100% tested for stability, compatibility and performance

Products specifications

Attribute name	Attribute value
Row active time	11 ns
Row cycle time	11 ns
Refresh row cycle time	11 ns
Operational conditions
Operating temperature (T-T)	-40 - 85 °C
Features
Internal memory	8 GB
Internal memory type	DDR3L
Memory clock speed	800 MHz
Component for	Notebook
Memory form factor	204-pin SO-DIMM
ECC	Y
Buffered memory type	Unregistered (unbuffered)
Memory voltage	1.35 V
Memory layout (modules x size)	1 x 8 GB

Product tags

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