Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MHz ECC

Kingston Technology KSM32SES8/16MF. Component for: Notebook, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22, ECC
Manufacturer: Kingston Technology
Availability: Out of Stock - on backorder and will be dispatched once in stock.
SKU: 6671330
Manufacturer part number: KSM32SES8/16MF
MSRP: $96.00
$72.54
Kingston's KSM32SES8/16MF is a 2G x 72-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Kingston's KSM32SES8/16MF is a 2G x 72-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Products specifications
Attribute nameAttribute value
Row cycle time45.75 ns
Refresh row cycle time350 ns